SI1330EDL Datasheet, PDF (1/5 Pages) Vishay Siliconix – N-Channel 60-V (D-S) MOSFET

New Product
N-Channel 60-V (D-S) MOSFET
Si1330EDL
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (W)
2.5 @ V_GS = 10 V
60
3 @ V_GS = 4.5 V
8 @ V_GS = 3 V
I_D (A)
0.25
0.23
0.05
FEATURES
D TrenchFETr Power MOSFET
D ESD Protected: 2000 V
APPLICATIONS
D P-Channel Driver
− Notebook PC
− Servers
SOT-323
SC-70 (3-LEADS)
D
G1
S2
3D
Marking Code
G
KD XX
Lot Traceability
and Date Code
Part # Code
Top View
S
Ordering Information: Si1330EDL-T1
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 secs
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)^a
Pulsed Drain Current
Continuous Diode Current (Diode Conduction)^a
Maximum Power Dissipation^a
Operating Junction and Storage Temperature Range
T_A = 25_C
T_A = 70_C
T_A = 25_C
T_A = 70_C
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
60
"20
0.25
0.24
0.2
0.19
1.0
0.26
0.23
0.31
0.28
0.20
0.18
−55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
t v 5 sec
Steady State
Steady State
Symbol
R_thJA
R_thJF
Typical
355
380
285
Maximum
400
450
340
Unit
V
A
W
_C
Unit
_C/W
Document Number: 72861
S-40853—Rev. A, 03-May-04
www.vishay.com
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