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| SI1315DL-T1-GE3 Datasheet, PDF (1/11 Pages) Vishay Siliconix – P-Channel 8 V (D-S) MOSFET | |||
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New Product
P-Channel 8 V (D-S) MOSFET
Si1315DL
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
-8
RDS(on) (ï)
0.336 at VGS = - 4.5 V
0.450 at VGS = - 2.5 V
0.650 at VGS = - 1.8 V
ID (A)c
- 0.9
- 0.7
- 0.5
Qg (Typ.)
1 nC
SOT-323
SC-70 (3-LEADS)
FEATURES
⢠Halogen-free According to IEC 61249-2-21
Definition
⢠TrenchFET® Power MOSFET
⢠100 % Rg Tested
⢠Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
⢠Load Switch for Portable Devices
⢠DC/DC Converters
G1
S
3D
G
S2
Top View
Si1315DL (LJ)*
* Marking Code
Ordering Information: Si1315DL-T1-GE3 (Lead (Pb)-free and Halogen-free)
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
-8
V
VGS
±8
TC = 25 °C
- 0.9
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current
TC = 70 °C
TA = 25 °C
ID
TA = 70 °C
IDM
- 0.7
- 0.8a, b
- 0.7a, b
A
-3
Continuous Source-Drain Diode Current
TC = 25 °C
IS
TA = 25 °C
TC = 25 °C
- 0.3
- 0.25
0.4
Maximum Power Dissipation
TC = 70 °C
PD
TA = 25 °C
0.2
0.3a, b
W
TA = 70 °C
0.2a, b
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
TJ, Tstg
- 50 to 150
°C
260
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. Based on TC = 25 °C.
Document Number: 67193
S10-2765-Rev. A, 29-Nov-10
www.vishay.com
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