SI1308EDL Datasheet, PDF (1/11 Pages) Vishay Telefunken – N-Channel 30 V (D-S) MOSFET

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Si1308EDL
Vishay Siliconix
N-Channel 30 V (D-S) MOSFET
PRODUCT SUMMARY
V_DS (V)
30
R_DS(on) (Ω) MAX.
0.132 at V_GS = 10 V
0.144 at V_GS = 4.5 V
0.185 at V_GS = 2.5 V
I_D (A) ^c
1.5
1.4
1.3
SOT-323
SC-70 (3 leads)
Q_g (TYP.)
1.4 nC
D
3
2
S
1
G
Top View
Marking Code: KG
Ordering Information:
Si1308EDL-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
• TrenchFET^® power MOSFET
• 100 % R_g tested
• Typical ESD performance 1800 V
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Smart phones, tablet PC’s
D
- DC/DC converters
- Boost converters
- Load switch, OVP switch
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150 °C)
Pulsed Drain Current (t = 300 μs)
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
T_C = 25 °C
T_C = 70 °C
T_A = 25 °C
T_A = 70 °C
T_C = 25 °C
T_A = 25 °C
T_C = 25 °C
T_C = 70 °C
T_A = 25 °C
T_A = 70 °C
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
LIMIT
30
± 12
1.4
1.1
1.5 ^{a, b}
1.2 ^{a, b}
6
0.4
0.3
0.5
0.3
0.4 ^{a, b}
0.3 ^{a, b}
-55 to +150
260
UNIT
V
A
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient ^{a, d}
Maximum Junction-to-Foot (Drain)
t ≤ 10 s
Steady State
Notes
a. Surface mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. Based on T_C = 25 °C.
d. Maximum under steady state conditions is 360 °C/W.
SYMBOL
R_thJA
R_thJF
TYP.
250
225
MAX.
300
270
UNIT
°C/W
S14-1997-Rev. C, 06-Oct-14
1
Document Number: 63399
For technical questions, contact: [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000