SI1307DL-T1-E3 Datasheet, PDF (1/5 Pages) Vishay Siliconix – P-Channel 1.8 V (G-S) MOSFET

P-Channel 1.8 V (G-S) MOSFET
Si1307DL
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
- 12
R_DS(on) (Ω)
0.290 at V_GS = - 4.5 V
0.435 at V_GS = - 2.5 V
0.580 at V_GS = - 1.8 V
I_D (A)
± 0.91
± 0.74
± 0.64
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET^® Power MOSFETs: 1.8 V Rated
• Compliant to RoHS Directive 2002/95/EC
SOT-323
SC-70 (3-LEADS)
G1
3D
S2
LC XX
Lot Traceability
and Date Code
Part # Code
Top View
Ordering Information: Si1307DL-T1-E3 (Lead (Pb)-free)
Si1307DL-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
5s
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
- 12
V
V_GS
±8
Continuous Drain Current (T_J = 150 °C)^a
T_A = 25 °C
T_A = 70 °C
I_D
± 0.91
± 0.72
± 0.85
± 0.68
A
Pulsed Drain Current
I_DM
±3
Continuous Diode Current (Diode Conduction)^a
I_S
- 0.28
- 0.24
Maximum Power Dissipation^a
T_A = 25 °C
T_A = 70 °C
P_D
0.34
0.22
0.29
W
0.19
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot (Drain)
Notes:
a. Surface mounted on 1" x 1" FR4 board.
t≤5s
Steady State
Steady State
Symbol
R_thJA
R_thJF
Typical
315
360
285
Maximum
375
430
340
Unit
°C/W
Document Number: 71077
S10-0721-Rev. B, 29-Mar-10
www.vishay.com
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