SI1305DL_08 Datasheet, PDF (1/5 Pages) Vishay Siliconix – P-Channel 1.8-V (G-S) MOSFET

P-Channel 1.8-V (G-S) MOSFET
Si1305DL
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (W)
0.280 @ V_GS = −4.5 V
−8
0.380 @ V_GS = −2.5 V
0.530 @ V_GS = −1.8 V
I_D (A)
−0.92
−0.79
−0.67
FEATURES
D TrenchFETr Power MOSFET: 1.8 V Rated
RoHS
COMPLIANT
SOT-323
SC-70 (3-LEADS)
G1
S2
3D
Top View
Marking Code
LB XX
Lot Traceability
and Date Code
Part # Code
Ordering Information: Si1305DL--T1
Si1305DL--T1—E3 (Lead (Pb)-Free)
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 secs Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)^a
Pulsed Drain Current
Continuous Diode Current (Diode Conduction)^a
Maximum Power Dissipation^a
Operating Junction and Storage Temperature Range
T_A = 25_C
T_A = 70_C
T_A = 25_C
T_A = 70_C
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
−8
"8
−0.92
−0.86
−0.74
−0.69
−3
−0.28
−0.24
0.34
0.29
0.22
0.19
−55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71076
S-51075—Rev. D, 13-Jun-05
t v 5 sec
Steady State
Steady State
Symbol
R_thJA
R_thJF
Typical
315
360
285
Maximum
375
430
340
Unit
_C/W
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