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SI1304DL Datasheet, PDF (1/5 Pages) Vishay Siliconix – N-Channel 25-V (D-S) MOSFET
N-Channel 25-V (D-S) MOSFET
Si1304DL
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
0.350 @ VGS = 4.5 V
25
0.450 @ VGS = 2.5 V
ID (A)
0.75
0.66
Qg (Typ)
1.3
SOT-323
SC-70 (3-LEADS)
G1
3D
S2
Top View
Ordering Information: Si1304DL-T1
Marking Code
KB XX
Lot Traceability
and Date Code
Part # Code
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 secs Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current
Continuous Diode Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 70_C
TA = 25_C
TA = 70_C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
25
"8
0.75
0.70
0.60
0.56
3.0
0.28
0.24
0.33
0.29
0.21
0.19
−55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71315
S-41774—Rev. C, 04-Oct-04
t v 5 sec
Steady State
Steady State
Symbol
RthJA
RthJF
Typical
315
380
285
Maximum
375
450
340
Unit
_C/W
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