SI1304BDL_10 Datasheet, PDF (1/7 Pages) Vishay Siliconix – N-Channel 30 V (D-S) MOSFET

N-Channel 30 V (D-S) MOSFET
Si1304BDL
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
30
R_DS(on) (Ω)
0.270 at V_GS = 4.5 V
0.385 at V_GS = 2.5 V
I_D (A)^a
0.90
0.75
Q_g (Typ.)
1.1
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET^® Power MOSFET
• 100 % R_g Tested
• Compliant to RoHS Directive 2002/95/EC
SC-70 (3-LEADS)
G1
S2
3D
Marking Code
KF XX
Lot Traceability
and Date Code
Part # Code
Top View
Ordering Information: Si1304BDL-T1-E3 (Lead (Pb)-free)
Si1304BDL-T1-GE3 (Lead (Pb)-free and Halogen-free)
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
30
V
V_GS
± 12
T_C = 25 °C
0.90
Continuous Drain Current (T_J = 150 °C)
T_C = 70 °C
T_A = 25 °C
I_D
0.71
0.85^{b, c}
T_A = 70 °C
0.68^{b, c}
A
Pulsed Drain Current
I_DM
4
Continuous Source-Drain Diode Current
T_C = 25 °C
T_A = 25 °C
I_S
0.31
0.28^{b, c}
T_C = 25 °C
0.37
Maximum Power Dissipation
T_C = 70 °C
T_A = 25 °C
P_D
0.24
0.34^{b, c}
W
T_A = 70 °C
0.22^{b, c}
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^{b, d}
t≤5s
Maximum Junction-to-Foot (Drain)
Steady State
Notes:
a. Based on T_C = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under steady state conditions is 360 °C/W.
Document Number: 73480
S10-0645-Rev. C, 22-Mar-10
Symbol
R_thJA
R_thJF
Typical
315
285
Maximum
375
340
Unit
°C/W
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