SI1304BDL_08 Datasheet, PDF (1/7 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET

New Product
N-Channel 30-V (D-S) MOSFET
Si1304BDL
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
30
r_DS(on) (W)
0.270 @ V_GS = 4.5 V
0.385 @ V_GS = 2.5 V
I_D (A)^a
0.90
0.75
Q_g (Typ)
1.1
FEATURES
D TrenchFETr Power MOSFET
D 100% R_g Tested
RoHS
COMPLIANT
SC-70 (3-LEADS)
G1
3D
S2
Marking Code
KF XX
Lot Traceability
and Date Code
Part # Code
D
G
Top View
Ordering Information: Si1304BDL–T1–E3
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
V_DS
30
Gate-Source Voltage
V_GS
"12
Continuous Drain Current (T_J = 150_C)
Pulsed Drain Current
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
T_C = 25_C
T_C = 70_C
T_A = 25_C
T_A = 70_C
T_C = 25_C
T_A = 25_C
T_C = 25_C
T_C = 70_C
T_A = 25_C
T_A = 70_C
I_D
I_DM
I_S
P_D
T_J, T_stg
0.90
0.71
0.85^{b, c}
0.68^{b, c}
4
0.31
0.28^{b, c}
0.37
0.24
0.34^{b, c}
0.22^{b, c}
–55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^{b, d}
Maximum Junction-to-Foot (Drain)
t p 5 sec
Steady State
Notes:
a. Based on T_C = 25_C.
b. Surface mounted on 1” x 1” FR4 board.
c. t = 5 sec
d. Maximum under steady state conditions is 360 _C/W.
Document Number: 73480
S–52057—Rev. B, 03–Oct–05
Symbol
R_thJA
R_thJF
Typical
315
285
Maximum
375
340
Unit
_C/W
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