SI1303EDL Datasheet, PDF (1/5 Pages) Vishay Siliconix – P-Channel 2.5-V (G-S) MOSFET

New Product
P-Channel 2.5-V (G-S) MOSFET
Si1303EDL
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (W)
0.430 @ V_GS = –4.5 V
–20
0.480 @ V_GS = –3.6 V
0.700 @ V_GS = –2.5 V
I_D (A)
"0.72
"0.68
"0.56
SOT-323
SC-70 (3-LEADS)
G1
3D
S2
Top View
Marking Code
LD XX
Lot Traceability
and Date Code
Part # Code
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 secs Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)^a
Pulsed Drain Current
Continuous Diode Current (Diode Conduction)^a
Maximum Power Dissipation^a
Operating Junction and Storage Temperature Range
T_A = 25_C
T_A = 70_C
T_A = 25_C
T_A = 70_C
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
–20
"12
"0.72
"0.67
"0.58
"2.5
"0.54
–0.28
–0.24
0.34
0.29
0.22
0.19
–55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71094
S-99400—Rev. A, 29-Nov-99
t v 5 sec
Steady State
Steady State
Symbol
R_thJA
R_thJF
Typical
315
360
285
Maximum
375
430
340
Unit
_C/W
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