SI1303DL_08 Datasheet, PDF (1/5 Pages) Vishay Siliconix – P-Channel 2.5-V (G-S) MOSFET

P-Channel 2.5-V (G-S) MOSFET
Si1303DL
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (Ω)
0.430 at V_GS = - 4.5 V
- 20
0.480 at V_GS = - 3.6 V
0.700 at V_GS = - 2.5 V
I_D (A)
- 0.72
- 0.68
- 0.56
FEATURES
• TrenchFET^® Power MOSFETs
• 2.5 V Rated
Pb-free
Available
RoHS*
COMPLIANT
SOT-323
SC-70 (3-LEADS)
G1
3D
S2
Top View
Marking Code
LA XX
Lot Traceability
and Date Code
Part # Code
Ordering Information: Si1303DL-T1
Si1303DL-T1-E3 (Lead (Pb)-free)
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
5 sec
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
- 20
V
V_GS
± 12
Continuous Drain Current (T_J = 150 °C)^a
Pulsed Drain Current
T_A = 25 °C
T_A = 70 °C
I_D
I_DM
- 0.72
- 0.67
- 0.58
- 0.54
A
- 2.5
Continuous Diode Current (Diode Conduction)^a
I_S
- 0.28
- 0.24
Maximum Power Dissipation^a
T_A = 25 °C
T_A = 70 °C
P_D
0.34
0.22
0.29
0.19
W
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot (Drain)
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
t ≤ 5 sec
Steady State
Steady State
Symbol
R_thJA
R_thJF
Typical
315
360
285
Maximum
375
430
340
Unit
°C/W
* Pb containing terminations are not RoHS compliant, exemptions may apply.
Document Number: 71075
S-61007–Rev. D, 12-Jun-06
www.vishay.com
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