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SI1303DL Datasheet, PDF (1/4 Pages) Vishay Siliconix – P-Channel 2.5-V (G-S) MOSFET
P-Channel 2.5-V (G-S) MOSFET
Si1303DL
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
0.430 @ VGS = - 4.5 V
- 20
0.480 @ VGS = - 3.6 V
0.700 @ VGS = - 2.5 V
ID (A)
- 0.72
- 0.68
- 0.56
SOT-323
SC-70 (3-LEADS)
G1
3D
S2
Top View
Marking Code
LA XX
Lot Traceability
and Date Code
Part # Code
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 secs Steady State
Drain-Source Voltage
Gate-Source Voltage
VDS
- 20
VGS
"12
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current
Continuous Diode Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 70_C
TA = 25_C
TA = 70_C
ID
IDM
IS
PD
TJ, Tstg
- 0.72
- 0.67
- 0.58
- 0.54
- 2.5
- 0.28
- 0.24
0.34
0.29
0.22
0.19
- 55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71075
S-03721—Rev. C, 07-Apr-03
t v 5 sec
Steady State
Steady State
Symbol
RthJA
RthJF
Typical
315
360
285
Maximum
375
430
340
Unit
_C/W
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