SI1302DL-T1 Datasheet, PDF (1/9 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET

N-Channel 30-V (D-S) MOSFET
Si1302DL
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
R_DS(on) ()
30
0.480 at V_GS = 10 V
0.700 at V_GS = 4.5 V
I_D (A)
0.64
0.53
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET^® Power MOSFET
• Compliant to RoHS Directive 2002/95/EC
SC-70 (3-LEADS)
G1
3D
S2
Marking Code
KA XX
Lot Traceability
and Date Code
Part # Code
Top View
Ordering Information: Si1302DL-T1-E3 (Lead (Pb)-free)
Si1302DL-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS (T_A = 25 °C, unless otherwise noted)
Parameter
Symbol
5s
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
V_GS
30
± 20
V
Continuous Drain Current (T_J = 150 °C)^a
Pulsed Drain Current
T_A = 25 °C
T_A = 70 °C
I_D
I_DM
0.64
0.60
0.51
0.48
A
1.5
Continuous Diode Current (Diode Conduction)^a
I_S
0.26
0.23
Maximum Power Dissipation^a
T_A = 25 °C
T_A = 70 °C
P_D
0.31
0.20
0.28
0.18
W
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot (Drain)
Notes:
a. Surface mounted on 1" x 1" FR4 board.
t 5 s
Steady State
Steady State
Symbol
R_thJA
R_thJF
Typical
355
380
285
Maximum
400
450
340
Unit
°C/W
Document Number: 71249
S10-2140-Rev. F, 20-Sep-10
www.vishay.com
1