SI1300BDL_10 Datasheet, PDF (1/10 Pages) Vishay Siliconix – N-Channel 20 V (D-S) MOSFET

Si1035X
Vishay Siliconix
Complementary N- and P-Channel 20 V (D-S) MOSFET
PRODUCT SUMMARY
V_DS (V)
R_DS(on) ()
5 at V_GS = 4.5 V
N-Channel
20
7 at V_GS = 2.5 V
9 at V_GS = 1.8 V
10 at V_GS = 1.5 V
8 at V_GS = - 4.5 V
P-Channel
12 at V_GS = - 2.5 V
- 20
15 at V_GS = - 1.8 V
20 at V_GS = - 1.5 V
I_D (mA)
200
175
150
50
- 150
- 125
- 100
- 30
S₁
1
SC-89
6 D₁
G₁ 2
5 G₂
Marking Code: M
D₂ 3
4 S₂
Top View
Ordering Information: Si1035X-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET^® Power MOSFET: 1.5 V Rated
• Very Small Footprint
• High-Side Switching
• Low On-Resistance:
N-Channel, 5 
P-Channel, 8 
• Low Threshold: ± 0.9 V (typ.)
• Fast Switching Speed: 45 ns (typ.)
• 1.5 V Operation
• Gate-Source ESD Protected: 2000 V
• Compliant to RoHS Directive 2002/95/EC
BENEFITS
• Ease in Driving Switches
• Low Offset (Error) Voltage
• Low-Voltage Operation
• High-Speed Circuits
• Low Battery Voltage Operation
APPLICATIONS
• Replace Digital Transistor, Level-Shifter
• Battery Operated Systems
• Power Supply Converter Circuits
• Load/Power Switching Cell Phones, Pagers
ABSOLUTE MAXIMUM RATINGS (T_A = 25 °C, unless otherwise noted)
N-Channel
P-Channel
Parameter
Symbol
5s
Steady State
5s
Steady State Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
20
- 20
V
V_GS
±5
Continuous Drain Current (T_J = 150 °C)^a
T_A = 25 °C
T_A = 85 °C
I_D
Pulsed Drain Current^b
I_DM
190
180
140
130
650
- 155
- 145
- 110
- 105
mA
- 650
Continuous Source Current (Diode Conduction)
I_S
450
380
- 450
- 380
Maximum Power Dissipation^a
T_A = 25 °C
T_A = 85 °C
P_D
280
145
250
130
280
145
250
mW
130
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
°C
Gate-Source ESD Rating (HBM, Method 3015)
ESD
2000
V
Notes:
a. Surface mounted on FR4 board.
b. Pulse width limited by maximum junction temperature.
Document Number: 71426
S10-2544-Rev. C, 08-Nov-10
www.vishay.com
1