SI1300BDL Datasheet, PDF (1/6 Pages) Vishay Siliconix – N-Channel 20-V (D-S) MOSFET

New Product
N-Channel 20-V (D-S) MOSFET
Si1300BDL
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
20
r_DS(on) (W)
0.85 at V_GS = 4.5 V
1.08 at V_GS = 2.5 V
I_D (A)^a
0.4
0.35
Q_g (Typ)
335
FEATURES
D TrenchFETr Power MOSFET
D 100 % R_g Tested
RoHS
COMPLIANT
SC-70 (3-LEADS)
G1
3D
S2
Marking Code
KE XX
Lot Traceability
and Date Code
Part # Code
D
G
Top View
Ordering Information: Si1300BDL–T1–E3
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25 _C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
V_DS
20
Gate-Source Voltage
Continuous Drain Current (T_J = 150 _C)
Pulsed Drain Current
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
T_C = 25 _C
T_C = 70 _C
T_A = 25 _C
T_A = 70 _C
T_C = 25 _C
T_A = 25 _C
T_C = 25 _C
T_C = 70 _C
T_A = 25 _C
T_A = 70 _C
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
"8
0.4
0.32
0.37^{b, c}
0.30^{b, c}
0.5
0.18
0.14^{b, c}
0.2
0.14
0.19
0.12^{b, c}
–55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^{b, d}
Maximum Junction-to-Foot (Drain)
t p 5 sec
Steady State
Notes:
a. Based on T_C = 25 _C.
b. Surface mounted on 1” x 1” FR4 board.
c. t = 5 sec
d. Maximum under steady state conditions is 360 _C/W.
Document Number: 73557
S–52388—Rev. A, 21–Nov–05
Symbol
R_thJA
R_thJF
Typical
540
450
Maximum
670
570
Unit
_C/W
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