SI1078X Datasheet, PDF (1/8 Pages) Vishay Siliconix – N-Channel 30 V (D-S) MOSFET

www.vishay.com
Si1078X
Vishay Siliconix
N-Channel 30 V (D-S) MOSFET
PRODUCT SUMMARY
V_DS (V)
30
R_DS(on) () MAX.
0.142 at V_GS = 10 V
0.154 at V_GS = 4 V
0.195 at V_GS = 2.5 V
I_D (A)
1.02
0.98
0.87
SC-89 Single (6 leads)
S
D4
D5
6
Q_g (TYP.)
1.5
FEATURES
• TrenchFET^® power MOSFET
• 100 % R_g tested
• Typical ESD performance 1400 V
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Load switch for portable devices
3
2^G
1D
D
Top View
Marking Code: D
Ordering Information:
Si1078X-T1-GE3 (lead (Pb)-free and halogen-free)
D
G
N-Channel MOSFET
S
ABSOLUTE MAXIMUM RATINGS (T_A = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150 °C) ^a
Pulsed Drain Current (t = 100 μs)
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
T_A = 25 °C
T_A = 70 °C
T_A = 25 °C
T_A = 25 °C
T_A = 70 °C
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
LIMIT
30
± 12
1.02 ^{a, b}
0.82 ^{a, b}
6
0.2 ^{a, b}
0.24 ^{a, b}
0.15 ^{a, b}
-55 to +150
UNIT
V
A
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient ^{a, c}
t5s
Steady State
Notes
a. Surface mounted on 1" x 1" FR4 board.
b. t = 5 s.
c. Maximum under steady state conditions is 650 °C/W.
SYMBOL
R_thJA
TYPICAL
440
540
MAXIMUM
530
650
UNIT
°C/W
S16-1056-Rev. A, 30-May-16
1
Document Number: 68549
For technical questions, contact: [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000