SI1077X Datasheet, PDF (1/8 Pages) Vishay Siliconix – Material categorization

P-Channel 20 V (D-S) MOSFET
Si1077X
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
- 20
R_DS(on) () Max.
0.078 at V_GS = - 4.5 V
0.098 at V_GS = - 2.5 V
0.130 at V_GS = - 1.8 V
0.188 at V_GS = - 1.5 V
I_D (A)
- 1.4
-1
-1
- 0.3
Q_g (Typ.)
12.1 nC
FEATURES
• TrenchFET^® Power MOSFET
• Typical ESD Performance 2500 V
• 100 % R_g Tested
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Load Switch for Portable Devices
• Power Management
SC-89 (6-LEADS)
D1
6D
D2
5D
G3
4S
Marking Code
XX
Lot Traceability
and Date Code
Part # Code
Top View
Ordering Information: Si1077X-T1-GE3 (Lead (Pb)-free and Halogen-free)
S
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain Current (T_J = 150 °C)
T_A = 25 °C
T_A = 70 °C
I_D
Pulsed Drain Current (t = 300 µs)
I_DM
Continuous Source-Drain Diode Current
T_A = 25 °C
I_S
Maximum Power Dissipation
T_A = 25 °C
T_A = 70 °C
P_D
Operating Junction and Storage Temperature Range
T_J, T_stg
Limit
- 20
±8
- 1.75^{b, c}
- 1.4^{b, c}
-8
- 0.28^{b, c}
0.33^{b, c}
0.21^{b, c}
- 55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^{a, b}
t 5 s
Steady State
Notes:
a. Maximum under steady state conditions is 450 °C/W.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
Symbol
R_thJA
Typical
300
360
Maximum
375
450
Unit
V
A
W
°C
Unit
°C/W
Document Number: 63254
For technical questions, contact: [e-mail]
www.vishay.com
S12-3081-Rev. A, 24-Dec-12
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000