SI1065X Datasheet, PDF (1/6 Pages) Vishay Siliconix – P-Channel 12-V (D-S) MOSFET

New Product
P-Channel 12-V (D-S) MOSFET
Si1065X
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
0.130 at V_GS = - 4.5 V
- 12
0.158 at V_GS = - 2.5V
0.205 at V_GS = - 1.8V
I_D (A)
1.18
1.07
0.49
SC-89 (6-LEADS)
D1
6D
D2
5D
G3
4S
Q_g (Typ.)
6.7
FEATURES
• Halogen-free Option Available
• TrenchFET^® Power MOSFET
• 100 % R_g Tested
APPLICATIONS
• Load Switch for Portable Devices
Marking Code
W XX
Lot Traceability
and Date Code
Part # Code
S
G
Top View
Ordering Information: Si1065X-T1-E3 (Lead (Pb)-free)
Si1065X-T1-GE3 (Lead (Pb)-free and Halogen-free)
D
P-Channel MOSFET
RoHS
COMPLIANT
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain Current (T_J = 150 °C)
T_A = 25 °C
T_A = 70 °C
I_D
Pulsed Drain Current
I_DM
Continuous Source-Drain Diode Current
T_A = 25 °C
I_S
Maximum Power Dissipation^a
T_A = 25 °C
T_A = 70 °C
P_D
Operating Junction and Storage Temperature Range
T_J, T_stg
Limit
- 12
±8
- 1.18^{b, c}
- 0.94^{b, c}
-8
- 0.2^{b, c}
0.236^{b, c}
0.151^{b, c}
- 55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^{a, b}
t≤5s
Steady State
Notes:
a. Maximum under Steady State conditions is 650 °C/W.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
Symbol
R_thJA
Typical
440
540
Maximum
530
650
Unit
V
A
W
°C
Unit
°C/W
Document Number: 74320
S-80641-Rev. B, 24-Mar-08
www.vishay.com
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