SI1058X_10 Datasheet, PDF (1/8 Pages) Vishay Siliconix – N-Channel 20 V (D-S) MOSFET

N-Channel 20 V (D-S) MOSFET
Si1058X
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
20
R_DS(on) ()
0.091 at V_GS = 4.5 V
0.124 at V_GS = 2.5 V
I_D (A)
1.3^a
1.1
Q_g (Typ.)
3.5
SC-89 (6-LEADS)
D1
6D
D2
5D
G3
4S
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET^® Power MOSFET
• 100 % R_g and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Load Switch for Portable Devices
Marking Code
T WL
Lot Traceability
and Date Code
Part Number Code
Top View
Ordering Information: Si1058X-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS (T_A = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
20
V
V_GS
± 12
Continuous Drain Current (T_J = 150 °C)^a
T_A = 25 °C
T_A = 70 °C
I_D
1.3^{b, c}
1.03^{b, c}
A
Pulsed Drain Current
I_DM
6
Avalanche Current
Repetitive Avalanche Energy
L = 0.1 mH
I_AS
7
E_AS
2.45
mJ
Continuous Source-Drain Diode Current
T_A = 25 °C
I_S
0.2^{b, c}
A
Maximum Power Dissipation^a
T_A = 25 °C
T_A = 70 °C
P_D
0.236^{b, c}
0.151^{b, c}
W
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^{b, d}
t 5 s
Steady State
Notes:
a. Based on T_C = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under steady state conditions is 650 °C/W.
Symbol
R_thJA
Typical
440
540
Maximum
530
650
Unit
°C/W
Document Number: 73894
S10-2542-Rev. D, 08-Nov-10
www.vishay.com
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