SI1051X Datasheet, PDF (1/6 Pages) Vishay Siliconix – P-Channel 8-V (D-S) MOSFET

New Product
P-Channel 8-V (D-S) MOSFET
Si1051X
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
0.122 at V_GS = - 4.5 V
0.141 at V_GS = - 2.5 V
-8
0.168 at V_GS = - 1.8 V
0.198 at V_GS = - 1.5 V
I_D (A)^a
1.2
1.1
0.60
0.50
Q_g (Typ.)
5.91
FEATURES
• Halogen-free Option Available
• TrenchFET^® Power MOSFET
• 100 % R_g Tested
APPLICATIONS
• Load Switch for Portable Applications
SC-89 (6-LEADS)
D1
D2
G3
6D
5D
4S
Marking Code
2 XX
Lot Traceability
and Date Code
Part # Code
S
G
RoHS
COMPLIANT
Top View
Ordering Information: Si1051X-T1-E3 (Lead (Pb)-free)
Si1051X-T1-GE3 (Lead (Pb)-free and Halogen-free)
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
-8
V_GS
±5
V
Continuous Drain Current (T_J = 150 °C)^a
T_A = 25 °C
T_A = 70 °C
I_D
1.2^{b, c}
0.97^{b, c}
A
Pulsed Drain Current
I_DM
-8
Continuous Source-Drain Diode Current
T_A = 25 °C
I_S
0.2^{b, c}
A
Maximum Power Dissipation^a
T_A = 25 °C
T_A = 70 °C
P_D
0.236^{b, c}
0.151^{b, c}
W
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^{b, d}
t≤5s
Steady State
Notes:
a. Based on T_A = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under Steady State conditions is 650 °C/W.
Symbol
R_thJA
Typical
440
540
Maximum
530
650
Unit
°C/W
Document Number: 74479
S-80641-Rev. B, 24-Mar-08
www.vishay.com
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