SI1046X Datasheet, PDF (1/5 Pages) Vishay Siliconix – N-Channel 20-V (D-S) MOSFET

New Product
N-Channel 20-V (D-S) MOSFET
Si1046X
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
0.420 at V_GS = 4.5 V
20
0.501 at V_GS = 2.5 V
0.660 at V_GS = 1.8 V
I_D (A)^a
0.606
0.505
0.15
Q_g (Typ.)
0.92
FEATURES
• Halogen-free Option Available
• TrenchFET^® Power MOSFET: 1.8 V Rated
• ESD Protected: 2000 V
RoHS
COMPLIANT
APPLICATIONS
• Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories
• Battery Operated Systems
• Power Supply Converter Circuits
• Load/Power Switching Cell Phones, Pagers
SC89-3L
G1
S2
3D
Marking Code
3 XX
Lot Traceability
and Date Code
Part # Code
Top View
Ordering Information: Si1046X-T1-E3 (Lead (Pb)-free)
Si1046X-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain Current (T_J = 150 °C)^a
T_A = 25 °C
T_A = 70 °C
I_D
Pulsed Drain Current
I_DM
Continuous Source-Drain Diode Current
T_A = 25 °C
I_S
Maximum Power Dissipation^a
T_A = 25 °C
T_A = 70 °C
P_D
Operating Junction and Storage Temperature Range
T_J, T_stg
Limit
20
±8
0.606^{b, c}
0.485^{b, c}
2.5
0.21^{b, c}
0.25^{b, c}
0.16^{b, c}
- 55 to 150
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^{b, d}
t≤5s
Steady State
Notes:
a. Based on T_C = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under steady state conditions is 650 °C/W.
Symbol
R_thJA
Typical
440
540
Maximum
530
650
Unit
°C/W
Document Number: 74594
S-81543-Rev. B, 07-Jul-08
www.vishay.com
1