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SI1040X-T1 Datasheet, PDF (1/8 Pages) Vishay Siliconix – Load Switch with Level-Shift
Load Switch with Level-Shift
Si1040X
Vishay Siliconix
PRODUCT SUMMARY
VDS2 (V)
RDS(on) ()
1.8 to 8
0.625 at VIN = 4.5 V
0.890 at VIN = 2.5 V
1.25 at VIN = 1.8 V
4
S2
Si1040X
2, 3
Q2
6
ID (A)
± 0.43
± 0.36
± 0.3
D2
R1, C1
5
Q1
ON/OFF
1
R2
SC89-6
Top View
R2
1
6
R1, C1
D2
2
5
ON/OFF
D2
3
4
S2
Ordering Information: Si1040X-T1-GE3 (Lead (Pb)-free and Halogen-free)
TYPICAL APPLICATION CIRCUIT
Si1040X
VIN
R1
4
Q2
6
2, 3
C1
6
VOUT
5
ON/OFF
Co
Q1
Ci
1
R2
R2
Document Number: 71809
S10-2544-Rev. D, 08-Nov-10
LOAD
GND
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 1.8 V to 8 V Input
• 1.5 V to 8 V Logic Level Control
• Smallest LITTLE FOOT® Package: 1.6 mm x 1.6 mm
• 2000 V ESD Protection On Input Switch, VON/OFF
• Adjustable Slew-Rate
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
The Si1040X includes a p- and n-Channel MOSFET in a
single SC89-6 package. The low on-resistance p-channel
TrenchFET is tailored for use as a load switch. The
n-channel, with an external resistor, can be used as a level-
shift to drive the p-channel load-switch. The n-channel
MOSFET has internal ESD protection and can be driven by
logic signals as low as 1.5 V. The Si1040X operates on
supply lines from 1.8 V to 8 V, and can drive loads up to
0.43 A.
Marking Code
P WL
Lot Traceability
and Date Code
Part Number Code
Switching Variation R2 at VIN = 2.5 V, R1 = 20 kΩ
20
tf
16
IL = 0.36 A
12 VON/OFF = 3 V
Ci = 10 µF
Co = 1 µF
8
tr
4
td(off)
td(on)
0
0
2
4
6
8
10
R2 (kΩ)
Note: For R2 switching variations with other VIN/R1
combinations See Typical Characteristics
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