SI1039X-T1-E3 Datasheet, PDF (1/7 Pages) Vishay Siliconix – P-Channel 1.8 V (G-S) MOSFET

P-Channel 1.8 V (G-S) MOSFET
Si1039X
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
- 12
R_DS(on) ()
0.165 at V_GS = - 4.5 V
0.220 at V_GS = - 2.5 V
0.280 at V_GS = - 1.8 V
I_D (A)
- 0.95
- 0.82
- 0.67
SC-89 (6-LEADS)
D1
D2
G3
6D
5D
4S
Top View
Marking Code
O WL
Lot Traceability
and Date Code
Part Number Code
Ordering Information: Si1039X-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET^® Power MOSFET
• Low Threshold
• Smallest LITTLE FOOT^® Package:
1.6 mm x 1.6 mm
• Low 0.6 mm Profile
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Cell Phones and Pagers
- Load Switch
ABSOLUTE MAXIMUM RATINGS (T_A = 25 °C, unless otherwise noted)
Parameter
Symbol
5s
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
- 12
V
V_GS
±8
Continuous Drain Current (T_J = 150 °C)^a
Pulsed Drain Current
T_A = 25 °C
T_A = 70 °C
I_D
- 0.95
- 0.76
- 0.87
- 0.69
A
I_DM
-4
Continuous Diode Current (Diode Conduction)^a
I_S
- 0.18
- 0.14
Maximum Power Dissipation^a
T_A = 25 °C
T_A = 70 °C
P_D
0.21
0.17
0.13
0.10
W
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
t5s
Steady State
Notes:
a. Surface mounted on 1" x 1" FR4 board with minimum copper.
Symbol
R_thJA
Typical
500
600
Maximum
600
720
Unit
°C/W
Document Number: 70682
S10-2544-Rev. D, 08-Nov-10
www.vishay.com
1