SI1037X Datasheet, PDF (1/4 Pages) Vishay Siliconix – P-Channel 1.8-V (G-S) MOSFET

New Product
P-Channel 1.8-V (G-S) MOSFET
Si1037X
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (W)
0.195 @ V_GS = –4.5 V
–20
0.260 @ V_GS = –2.5 V
0.350 @ V_GS = –1.8 V
I_D (A)
–0.84
–0.73
–0.64
FEATURES
D TrenchFETr Power MOSFET
D Low Threshold
D Smallest LITTLE FOOTr Package: 1.6 mm x 1.6 mm
D Low 0.6-mm Profile
APPLICATIONS
D Cell Phones and Pagers
– Load Switch
D Battery Operated Systems
SC-89 (6-LEADS)
D1
6D
D2
5D
G3
4S
Top View
Marking Code
N
Pin 1
Identifier
WL
Lot Traceability
and Date Code
Part Number Code
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 secs Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)^a
Pulsed Drain Current
Continuous Diode Current (Diode Conduction)^a
Maximum Power Dissipation^a
Operating Junction and Storage Temperature Range
T_A = 25_C
T_A = 70_C
T_A = 25_C
T_A = 70_C
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
–20
"8
–0.84
–0.77
–0.68
–0.62
–4
–0.18
–0.14
0.21
0.17
0.13
0.10
–55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
t v 5 sec
Steady State
Notes
a. Surface Mounted on 1” x 1” FR4 Board with minimum copper.
Document Number: 70686
S-04766—Rev. A, 08-Oct-01
Symbol
R_thJA
Typical
500
600
Maximum
600
720
Unit
_C/W
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