SI1034X_08 Datasheet, PDF (1/5 Pages) Vishay Siliconix – N-Channel 20-V (D-S) MOSFET

N-Channel 20-V (D-S) MOSFET
Si1034X
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
5 at V_GS = 4.5 V
7 at V_GS = 2.5 V
20
9 at V_GS = 1.8 V
10 at V_GS = 1.5 V
I_D (mA)
200
175
150
50
S₁ 1
SC-89
6 D₁
G₁ 2
D₂ 3
5 G₂
4 S₂
Marking Code: L
Top View
Ordering Information: Si1034X-T1-E3 (Lead (Pb)-free)
Si1034X-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
• Halogen-free Option Available
• TrenchFET^® Power MOSFET: 1.5 V Rated
• Low-Side Switching
• Low On-Resistance: 5 Ω
• Low Threshold: 0.9 V (typ.)
• Fast Switching Speed: 35 ns (typ.)
• 1.5 V Operation
• Gate-Source ESD Protected: 2000 V
RoHS
COMPLIANT
BENEFITS
• Ease in Driving Switches
• Low Offset (Error) Voltage
• Low-Voltage Operation
• High-Speed Circuits
• Low Battery Voltage Operation
APPLICATIONS
• Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories
• Battery Operated Systems
• Power Supply Converter Circuits
• Load/Power Switching Cell Phones, Pagers
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
5s
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
20
V
V_GS
±5
Continuous Drain Current (T_J = 150 °C)^a
Pulsed Drain Current^b
T_A = 25 °C
T_A = 85 °C
I_D
190
180
140
130
mA
I_DM
650
Continuous Source Current (Diode Conduction)
I_S
450
380
Maximum Power Dissipation^a
T_A = 25 °C
T_A = 85 °C
P_D
280
250
mW
145
130
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
°C
Gate-Source ESD Rating (HBM, Method 3015)
ESD
2000
V
Notes:
a. Surface Mounted on FR4 board.
b. Pulse width limited by maximum junction temperature.
Document Number: 71427
S-80643-Rev. B, 24-Mar-08
www.vishay.com
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