SI1032R Datasheet, PDF (1/4 Pages) Vishay Siliconix – N-Channel 20-V (D-S) MOSFET

N-Channel 20-V (D-S) MOSFET
Si1032R/X
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (W)
5 @ V_GS = 4.5 V
20
7 @ V_GS = 2.5 V
9 @ V_GS = 1.8 V
10 @ V_GS = 1.5 V
I_D (mA)
200
175
150
50
1.5-V Rated
FEATURES
D Low-Side Switching
D Low On-Resistance: 5 W
D Low Threshold: 0.9 V (typ)
D Fast Switching Speed: 35 ns
D 1.8-V Operation
D Gate-Source ESD Protection
BENEFITS
D Ease in Driving Switches
D Low Offset (Error) Voltage
D Low-Voltage Operation
D High-Speed Circuits
D Low Battery Voltage Operation
APPLICATIONS
D Drivers: Relays, Solenoids, Lamps,
Hammers, Displays, Memories
D Battery Operated Systems
D Power Supply Converter Circuits
D Load/Power Switching Cell Phones, Pagers
SC-75A or SC-89
G1
S2
Top View
Ordering Information:
SC-75A (SOT-416): Si1032R-T1
3 D ^{SC-75A (SOT-416): Si1032R-T1—E3 (Lead Free)}
SC-89 (SOT-490): Si1032X-T1
SC-89 (SOT-490): Si1032X-T1—E3 (Lead Free)
Marking Code: G
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Si1032R
Si1032X
Parameter
Symbol ^{5 secs Steady State 5 secs Steady State}
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)^a
Pulsed Drain Current^a
T_A = 25_C
T_A = 85_C
Continuous Source Current (diode conduction)^a
Maximum Power Dissipation^a for SC-75
T_A = 25_C
T_A = 85_C
Operating Junction and Storage Temperature Range
Gate-Source ESD Rating (HBM, Method 3015)
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
ESD
20
"6
200
140
210
200
110
100
150
140
500
600
250
200
300
240
280
250
340
300
145
130
170
150
−55 to 150
2000
Unit
V
mA
mW
_C
V
Notes
c. Surface Mounted on FR4 Board.
Document Number: 71172
S-40574—Rev. C, 29-Mar-04
www.vishay.com
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