SI1031R_08 Datasheet, PDF (1/5 Pages) Vishay Siliconix – P-Channel 20-V (D-S) MOSFET

P-Channel 20-V (D-S) MOSFET
Si1031R/X
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
8 at V_GS = - 4.5 V
12 at V_GS = - 2.5 V
- 20
15 at V_GS = - 1.8 V
20 at V_GS = - 1.5 V
I_D (mA)
- 150
- 125
- 100
- 30
SC-75A or SC-89
G1
SC-75A (SOT - 416): Si1031R
SC-89 (SOT - 490): Si1031X
3D
S2
Marking Code: H
Top View
Ordering Information:
Si1031R-T1-E3 (SC-75A, Lead (Pb)-free)
Si1031R-T1-GE3 (SC-75A, Lead (Pb)-free and Halogen-free)
Si1031X-T1-E3 (SC-89, Lead (Pb)-free)
Si1031X-T1-GE3 (SC-89, Lead (Pb)-free and Halogen-free)
FEATURES
• Halogen-free Option Available
• High-Side Switching
• Low On-Resistance: 8 Ω
• Low Threshold: 0.9 V (typ.)
• Fast Switching Speed: 45 ns
• TrenchFET^® Power MOSFETs: 1.5-V Rated
• ESD Protected: 2000 V
RoHS
COMPLIANT
APPLICATIONS
• Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories
• Battery Operated Systems
• Power Supply Converter Circuits
• Load/Power Switching Cell Phones, Pagers
BENEFITS
• Ease in Driving Switches
• Low Offset (Error) Voltage
• Low-Voltage Operation
• High-Speed Circuits
• Low Battery Voltage Operation
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Si1031R
Si1031X
Parameter
Symbol
5s
Steady State
5s
Steady State Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
- 20
V
V_GS
±6
Continuous Drain Current (T_J = 150 °C)^a
T_A = 25 °C
T_A = 85 °C
I_D
Pulsed Drain Current^a
I_DM
- 150
- 140
- 110
- 100
- 500
- 165
- 155
- 150
- 125
mA
- 600
Continuous Source Current (Diode Conduction)^a
I_S
- 250
- 200
- 340
- 240
Maximum Power Dissipation^a
T_A = 25 °C
T_A = 85 °C
P_D
280
145
250
130
340
170
300
mW
150
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
°C
Gate-Source ESD Rating (HBM, Method 3015)
ESD
2000
V
Notes:
a. Surface Mounted on FR4 board.
Document Number: 71171
S-81543-Rev. C, 07-Jul-08
www.vishay.com
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