SI1031R Datasheet, PDF (1/4 Pages) Vishay Siliconix – P-Channel 20-V (D-S) MOSFET

New Product
P-Channel 20-V (D-S) MOSFET
Si1031R/X
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (W)
8 @ V_GS = -4.5 V
12 @ V_GS = -2.5 V
- 20
15 @ V_GS = -1.8 V
20 @ V_GS = -1.5 V
I_D (mA)
- 150
- 125
- 100
- 30
1.5−V Rated
FEATURES
D High-Side Switching
D Low On-Resistance: 8 W
D Low Threshold: 0.9 V (typ)
D Fast Switching Speed: 45 ns
D 1.8-V Operation
D Gate-Source ESD Protection
BENEFITS
D Ease in Driving Switches
D Low Offset (Error) Voltage
D Low-Voltage Operation
D High-Speed Circuits
D Low Battery Voltage Operation
APPLICATIONS
D Drivers: Relays, Solenoids, Lamps,
Hammers, Displays, Memories
D Battery Operated Systems
D Power Supply Converter Circuits
D Load/Power Switching Cell Phones, Pagers
SC-75A or SC-89
G1
3D
SC-75A (SOT - 416): Si1031R
SC-89 (SOT - 490): Si1031X
S2
Top View
Marking Code: H
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Si1031R
Si1031X
Parameter
Symbol ^{5 secs Steady State 5 secs Steady State}
Drain-Source Voltage
Gate-Source Voltage
V_DS
- 20
V_GS
"6
Continuous Drain Current (T_J = 150_C)^a
Pulsed Drain Current^a
T_A = 25_C
T_A = 85_C
Continuous Source Current (diode conduction)^a
Maximum Power Dissipation^a
T_A = 25_C
T_A = 85_C
Operating Junction and Storage Temperature Range
Gate-Source ESD Rating (HBM, Method 3015)
I_D
I_DM
I_S
P_D
T_J, T_stg
ESD
- 150
- 110
- 250
280
145
- 140
- 100
- 500
- 200
250
130
- 165
- 150
- 340
340
170
-55 to 150
2000
- 155
- 125
- 600
- 240
300
150
Unit
V
mA
mW
_C
V
Notes
a. Surface Mounted on FR4 Board.
Document Number: 71171
S-31507—Rev. B, 14-Jul-03
www.vishay.com
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