SI1029X_08 Datasheet, PDF (1/8 Pages) Vishay Siliconix – Complementary N- and P-Channel 60-V (D-S) MOSFET

Si1029X
Vishay Siliconix
Complementary N- and P-Channel 60-V (D-S) MOSFET
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
N-Channel
1.40 at V_GS = 10 V
60
3 at V_GS = 4.5 V
4 at V_GS = - 10 V
P-Channel
- 60
8 at V_GS = - 4.5 V
I_D (mA)
500
200
- 500
- 25
S₁
1
G₁ 2
SC-89
6 D₁
5 G₂
Marking Code: H
D₂ 3
4 S₂
Top View
Ordering Information: Si1029X-T1-E3 (Lead (Pb)-free)
Si1029X-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
• Halogen-free Option Available
• TrenchFET^® Power MOSFETs
• Very Small Footprint
• High-Side Switching
• Low On-Resistance:
N-Channel, 1.40 Ω
P-Channel, 4 Ω
• Low Threshold: ± 2 V (typ.)
• Fast Switching Speed: 15 ns (typ.)
• Gate-Source ESD Protected: 2000 V
BENEFITS
• Ease in Driving Switches
• Low Offset (Error) Voltage
• Low-Voltage Operation
• High-Speed Circuits
APPLICATIONS
• Replace Digital Transistor, Level-Shifter
• Battery Operated Systems
• Power Supply Converter Circuits
RoHS
COMPLIANT
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
N-Channel
P-Channel
Parameter
Symbol
5s
Steady State
5s
Steady State Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
60
- 60
V
V_GS
± 20
Continuous Drain Current (T_J = 150 °C)^a
T_A = 25 °C
T_A = 85 °C
I_D
Pulsed Drain Current^b
I_DM
320
305
230
220
650
- 200
- 190
- 145
- 135
mA
- 650
Continuous Source Current (Diode Conduction)^a
I_S
450
380
- 450
- 380
Maximum Power Dissipation^a
T_A = 25 °C
T_A = 85 °C
P_D
280
145
250
130
280
145
250
mW
130
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
°C
Gate-Source ESD Rating (HBM, Method 3015)
ESD
2000
V
Notes:
a. Surface Mounted on FR4 board.
b. Pulse width limited by maximum junction temperature.
Document Number: 71435
S-80643-Rev. B, 24-Mar-08
www.vishay.com
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