SI1028X Datasheet, PDF (1/8 Pages) Vishay Telefunken – Dual N-Channel 30 V (D-S) MOSFET

Dual N-Channel 30 V (D-S) MOSFET
Si1028X
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
R_DS(on) () Max.
0.650 at V_GS = 10 V
30
0.770 at V_GS = 4.5 V
I_D (A)
0.48
0.45
Q_g (Typ.)
0.5
S₁ 1
G₁ 2
D₂ 3
SC-89
6 D₁
5 G₂
4 S₂
FEATURES
• TrenchFET^® Power MOSFET
• ESD Protected: 550 V Typical HBM
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
BENEFITS
• Low Offset Voltage
• Low-Voltage Operation
• High-Speed Circuits
• Small Board Area
APPLICATIONS
• Load/Signal Switching for Portable Devices
• Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories
• Battery Operated Systems
Marking Code
G XX
Lot Traceability
and Date Code
Part # Code
Top View
Ordering Information: Si1028X-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS (T_A = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
30
V
V_GS
± 20
Continuous Drain Current (T_J = 150 °C)^a
T_A = 25 °C
T_A = 70 °C
I_D
0.48^{a, b}
0.45^{a, b}
A
Pulsed Drain Current (t = 300 µs)
I_DM
1
Continuous Source-Drain Diode Current
T_A = 25 °C
I_S
0.18^{a, b}
A
Maximum Power Dissipation^a
T_A = 25 °C
T_A = 70 °C
P_D
0.22^{a, b}
0.14^{a, b}
W
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^b
t 5 s
Steady State
Symbol
R_thJA
Typ.
470
560
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. t = 5 s.
Max.
565
675
Unit
°C/W
Document Number: 63862
For technical questions, contact: [e-mail]
www.vishay.com
S12-1956-Rev. B, 13-Aug-12
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000