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| SI1026X_10 Datasheet, PDF (1/7 Pages) Vishay Siliconix – N-Channel 60 V (D-S) MOSFET | |||
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N-Channel 60 V (D-S) MOSFET
Si1026X
Vishay Siliconix
PRODUCT SUMMARY
VDS(min) (V)
RDS(on) (ï)
60
1.40 at VGS = 10 V
VGS(th) (V)
1 to 2.5
ID (mA)
500
S1 1
SC-89
6 D1
G1 2
D2 3
5 G2
4 S2
Marking Code: E
Top View
Ordering Information: Si1026X-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
⢠Halogen-free According to IEC 61249-2-21
Definition
⢠Low On-Resistance: 1.40 ï
⢠Low Threshold: 2 V (typ.)
⢠Low Input Capacitance: 30 pF
⢠Fast Switching Speed: 15 ns (typ.)
⢠Low Input and Output Leakage
⢠ESD Protected: 2000 V
⢠Miniature Package
⢠Compliant to RoHS Directive 2002/95/EC
BENEFITS
⢠Low Offset Voltage
⢠Low-Voltage Operation
⢠High-Speed Circuits
⢠Low Error Voltage
⢠Small Board Area
APPLICATIONS
⢠Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories, Transistors, etc.
⢠Battery Operated Systems
⢠Solid-State Relays
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
5s
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
60
V
VGS
± 20
Continuous Drain Current (TJ = 150 °C)a
Pulsed Drain Currentb
TA = 25 °C
TA = 85 °C
ID
320
305
230
220
mA
IDM
- 650
Continuous Source Current (Diode Conduction)a
IS
450
380
Maximum Power Dissipationa
TA = 25 °C
TA = 85 °C
PD
280
250
mW
145
130
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
°C
Gate-Source ESD Rating (HBM, Method 3015)
ESD
2000
V
Notes:
a. Surface mounted on FR4 board.
b. Pulse width limited by maximum junction temperature.
Document Number: 71434
S10-2432-Rev. D, 25-Oct-10
www.vishay.com
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