SI1026X_08 Datasheet, PDF (1/5 Pages) Vishay Siliconix – N-Channel 60-V (D-S) MOSFET

N-Channel 60-V (D-S) MOSFET
Si1026X
Vishay Siliconix
PRODUCT SUMMARY
V_(BR)DSS(min) (V)
R_DS(on) (Ω)
60
1.40 at V_GS = 10 V
V_GS(th) (V)
1 to 2.5
I_D (mA)
500
S₁ 1
SC-89
6 D₁
G₁ 2
D₂ 3
5 G₂
4 S₂
Marking Code: E
Top View
Ordering Information: Si1026X-T1-E3 (Lead (Pb)-free)
Si1026X-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
• Halogen-free Option Available
• Low On-Resistance: 1.40 Ω
• Low Threshold: 2 V (typ.)
• Low Input Capacitance: 30 pF
• Fast Switching Speed: 15 ns (typ.)
• Low Input and Output Leakage
• ESD Protected: 2000 V
• Miniature Package
RoHS
COMPLIANT
BENEFITS
• Low Offset Voltage
• Low-Voltage Operation
• High-Speed Circuits
• Low Error Voltage
• Small Board Area
APPLICATIONS
• Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories, Transistors, etc.
• Battery Operated Systems
• Solid-State Relays
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
5s
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
60
V
V_GS
± 20
Continuous Drain Current (T_J = 150 °C)^a
Pulsed Drain Current^b
T_A = 25 °C
T_A = 85 °C
I_D
320
305
230
220
mA
I_DM
- 650
Continuous Source Current (Diode Conduction)^a
I_S
450
380
Maximum Power Dissipation^a
T_A = 25 °C
T_A = 85 °C
P_D
280
250
mW
145
130
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
°C
Gate-Source ESD Rating (HBM, Method 3015)
ESD
2000
V
Notes:
a. Surface Mounted on FR4 board.
b. Pulse width limited by maximum junction temperature.
Document Number: 71434
S-80643-Rev. C, 24-Mar-08
www.vishay.com
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