SI1026X Datasheet, PDF (1/4 Pages) Vishay Siliconix – N-Channel 60-V (D-S) MOSFET

New Product
N-Channel 60-V (D-S) MOSFET
Si1026X
Vishay Siliconix
PRODUCT SUMMARY
V_(BR)DSS(min) (V) r_DS(on) (W)
60
1.40 @ V_GS = 10 V
V_GS(th) (V)
1 to 2.5
I_D (mA)
500
FEATURES
BENEFITS
D Low On-Resistance: 1.40 W
D Low Threshold: 2 V (typ)
D Low Input Capacitance: 30 pF
D Fast Switching Speed: 15 ns (typ)
D Low Input and Output Leakage
D Miniature Package
D Low Offset Voltage
D Low-Voltage Operation
D High-Speed Circuits
D Low Error Voltage
D Small Board Area
APPLICATIONS
D Drivers: Relays, Solenoids, Lamps, Hammers,
Displays, Memories, Transistors, etc.
D Battery Operated Systems
D Solid-State Relays
S₁ 1
SC-89
6 D₁
G₁ 2
D₂ 3
5 G₂
4 S₂
Top View
Marking Code: E
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 secs
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)^a
Pulsed Drain Current^b
Continuous Source Current (diode conduction)^a
Maximum Power Dissipation^a
Operating Junction and Storage Temperature Range
Gate-Source ESD Rating (HBM, Method 3015)
T_A = 25_C
T_A = 85_C
T_A = 25_C
T_A = 85_C
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
ESD
60
"20
320
305
230
220
–650
450
380
280
250
145
130
–55 to 150
2000
Notes
a. Surface Mounted on FR4 Board.
b. Pulse width limited by maximum junction temperature.
Unit
V
mA
mW
_C
V
Document Number: 71434
S-03518—Rev. A, 23-Apr-01
www.vishay.com
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