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SI1025X_08 Datasheet, PDF (1/5 Pages) Vishay Siliconix – P-Channel 60-V (D-S) MOSFET
P-Channel 60-V (D-S) MOSFET
Si1025X
Vishay Siliconix
PRODUCT SUMMARY
V(BR)DSS (min) (V)
RDS(on) (Ω)
- 60
4 at VGS = - 10 V
VGS(th) (V)
- 1 to - 3.0
ID (mA)
- 500
S1 1
SC-89
6 D1
G1 2
5 G2
Marking Code: D
D2 3
4 S2
Top View
Ordering Information: Si1025X-T1-E3 (Lead (Pb)-free)
Si1025X-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
• Halogen-free Option Available
• TrenchFET® Power MOSFETs
• High-Side Switching
• Low On-Resistance: 4 Ω
• Low Threshold: - 2 V (typ.)
• Fast Switching Speed: 20 ns (typ.)
• Low Input Capacitance: 23 pF (typ.)
• Miniature Package
• Gate-Source ESD Protected: 2000 V
RoHS
COMPLIANT
BENEFITS
• Ease in Driving Switches
• Low Offset Voltage
• Low-Voltage Operation
• High-Speed Circuits
• Easily Driven Without Buffer
• Small Board Area
APPLICATIONS
• Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories, Transistors etc.
• Battery Operated Systems
• Power Supply Converter Circuits
• Solid State Relays
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
5s
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
- 60
V
VGS
± 20
Continuous Drain Current (TJ = 150 °C)a
Pulsed Drain Currentb
TA = 25 °C
TA = 85 °C
ID
- 200
- 145
- 190
- 135
mA
IDM
- 650
Continuous Source Current (Diode Conduction)a
IS
- 450
- 380
Maximum Power Dissipationa
TA = 25 °C
TA = 85 °C
PD
280
250
mW
145
130
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
°C
Gate-Source ESD Rating (HBM, Method 3015)
ESD
2000
V
Notes:
a. Surface Mounted on FR4 board.
b. Pulse width limited by maximum junction temperature.
Document Number: 71433
S-80643-Rev. B, 24-Mar-08
www.vishay.com
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