SI1023X Datasheet, PDF (1/4 Pages) Vishay Siliconix – Dual P-Channel 20-V (D-S) MOSFET

New Product
Si1023X
Vishay Siliconix
Dual P-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (W)
1.2 @ V_GS = –4.5 V
–20
1.6 @ V_GS = –2.5 V
2.7 @ V_GS = –1.8 V
I_D (mA)
–350
–300
–150
FEATURES
D Very Small Footprint
D High-Side Switching
D Low On-Resistance: 1.2 W
D Low Threshold: 0.8 V (typ)
D Fast Swtiching Speed: 14 ns
D 1.8-V Operation
D Gate-Source ESD Protection
BENEFITS
D Ease in Driving Switches
D Low Offset (Error) Voltage
D Low-Voltage Operation
D High-Speed Circuits
D Low Battery Voltage Operation
APPLICATIONS
D Drivers: Relays, Solenoids, Lamps,
Hammers, Displays, Memories
D Battery Operated Systems
D Power Supply Converter Circuits
D Load/Power Switching Cell Phones, Pagers
SOT-563
SC-89
S₁ 1
6 D₁
G₁ 2
5 G₂
D₂ 3
4 S₂
Top View
Marking Code: B
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 secs
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)^a
Pulsed Drain Current^b
Continuous Source Current (diode conduction)^a
Maximum Power Dissipation^a
Operating Junction and Storage Temperature Range
Gate-Source ESD Rating (HBM, Method 3015)
T_A = 25_C
T_A = 85_C
T_A = 25_C
T_A = 85_C
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
ESD
–390
–280
–450
280
145
–20
"6
–650
–55 to 150
2000
–370
–265
–380
250
130
Notes
a. Surface Mounted on FR4 Board.
b. Pulse width limited by maximum junction temperature.
Unit
V
mA
mW
_C
V
Document Number: 71169
S-03104—Rev. A, 08-Feb-01
www.vishay.com
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