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| SI1023CX Datasheet, PDF (1/8 Pages) Vishay Siliconix – Dual P-Channel 20 V (D-S) MOSFET | |||
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Dual P-Channel 20 V (D-S) MOSFET
Si1023CX
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
- 20
RDS(on) (ï)
0.756 at VGS = - 4.5 V
1.038 at VGS = - 2.5 V
1.44 at VGS = - 1.8 V
2.4 at VGS = - 1.5 V
ID (A)
- 0.35
- 0.35
- 0.1
- 0.05
Qg (Typ.)
1 nC
FEATURES
⢠Halogen-free According to IEC 61249-2-21
Definition
⢠TrenchFET® Power MOSFET
⢠100 % Rg Tested
⢠Typical ESD protection: 1000 V (HBM)
⢠Fast Switching Speed
⢠Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
⢠Load and Small Signal Switch for Portable Devices
⢠Drivers: Relays, Solenoids, Displays, Lamps
⢠Battery Operated Systems
⢠Smart Phones, Tablet PCs
SC-89 (6-LEADS)
S1 1
6 D1
Marking Code
S1
S2
7 XX
G1 2
5 G2
Lot Traceability
and Date Code
G1
G2
D2 3
4 S2
Part # Code
Top View
Ordering Information: Si1023CX-T1-GE3 (Lead (Pb)-free and Halogen-free)
D1
D2
Dual P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
- 20
V
VGS
±8
Continuous Drain Current (TJ = 150 °C)
TA = 25 °C
TA = 70 °C
ID
- 0.45b, c
- 0.36b, c
A
Pulsed Drain Current (t = 300 µs)
IDM
- 1.5
Continuous Source-Drain Diode Current
TA = 25 °C
IS
- 0.18b, c
Maximum Power Dissipation
TA = 25 °C
TA = 70 °C
PD
0.22b, c
0.14b, c
W
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
t ï£ï 5 s
Maximum Junction-to-Ambienta, b
Steady State
State
Notes:
a. Maximum under steady state conditions is 675 °C/W.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
Symbol
RthJA
Typical
470
560
Maximum
565
675
Unit
°C/W
Document Number: 63303
www.vishay.com
S11-1384-Rev. A, 11-Jul-11
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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