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SI1022R_10 Datasheet, PDF (1/7 Pages) Vishay Siliconix – N-Channel 60 V (D-S) MOSFET | |||
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N-Channel 60 V (D-S) MOSFET
Si1022R
Vishay Siliconix
PRODUCT SUMMARY
VDS(min.) (V)
RDS(on) (ï)
60
1.25 at VGS = 10 V
VGS(th) (V)
1 to 2.5
ID (mA)
330
SC-75A
(SOT-416)
G1
3D
S2
Marking Code: E
Ordering Information: Si1022R-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
⢠Halogen-free According to IEC 61249-2-21
Definition
⢠TrenchFET® Power MOSFETs
⢠Low On-Resistance: 1.25 ï
⢠Low Threshold: 2.5 V
⢠Low Input Capacitance: 30 pF
⢠Fast Switching Speed: 25 ns
⢠Low Input and Output Leakage
⢠Miniature Package
⢠ESD Protected: 2000 V
⢠Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
⢠Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories, Transistors, etc.
⢠Battery Operated Systems
⢠Solid State Relays
BENEFITS
⢠Low Offset Voltage
⢠Low-Voltage Operation
⢠High-Speed Circuits
⢠Low Error Voltage
⢠Small Board Area
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Currenta
Pulsed Drain Currenta
TA = 25 °C
TA = 85 °C
ID
IDM
Power Dissipationa
TA = 25 °C
TA = 85 °C
PD
Thermal Resistance, Maximum Junction-to-Ambienta
RthJA
Operating Junction and Storage Temperature Range
TJ, Tstg
Notes:
a. Surface mounted on FR4 board, power applied for t ï£ 10 s.
Limit
60
± 20
330
240
650
250
130
500
- 55 to 150
Unit
V
mA
mW
°C/W
°C
Document Number: 71331
S10-2687-Rev. F, 22-Nov-10
www.vishay.com
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