SI1022R-T1 Datasheet, PDF (1/8 Pages) Vishay Siliconix – N-Channel 60 V (D-S) MOSFET

N-Channel 60 V (D-S) MOSFET
Si1022R
Vishay Siliconix
PRODUCT SUMMARY
V_DS(min.) (V)
R_DS(on) ()
60
1.25 at V_GS = 10 V
V_GS(th) (V)
1 to 2.5
I_D (mA)
330
SC-75A
(SOT-416)
G1
3D
S2
Marking Code: E
Ordering Information: Si1022R-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET^® Power MOSFETs
• Low On-Resistance: 1.25 
• Low Threshold: 2.5 V
• Low Input Capacitance: 30 pF
• Fast Switching Speed: 25 ns
• Low Input and Output Leakage
• Miniature Package
• ESD Protected: 2000 V
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories, Transistors, etc.
• Battery Operated Systems
• Solid State Relays
BENEFITS
• Low Offset Voltage
• Low-Voltage Operation
• High-Speed Circuits
• Low Error Voltage
• Small Board Area
ABSOLUTE MAXIMUM RATINGS (T_A = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain Current^a
Pulsed Drain Current^a
T_A = 25 °C
T_A = 85 °C
I_D
I_DM
Power Dissipation^a
T_A = 25 °C
T_A = 85 °C
P_D
Thermal Resistance, Maximum Junction-to-Ambient^a
R_thJA
Operating Junction and Storage Temperature Range
T_J, T_stg
Notes:
a. Surface mounted on FR4 board, power applied for t  10 s.
Limit
60
± 20
330
240
650
250
130
500
- 55 to 150
Unit
V
mA
mW
°C/W
°C
Document Number: 71331
S10-2687-Rev. F, 22-Nov-10
www.vishay.com
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