SI1021R_08 Datasheet, PDF (1/5 Pages) Vishay Siliconix – P-Channel 60-V (D-S) MOSFET

P-Channel 60-V (D-S) MOSFET
Si1021R
Vishay Siliconix
PRODUCT SUMMARY
V_DS(min.) (V)
R_DS(on) (Ω)
- 60
4.0 at V_GS = - 10 V
V_GS(th) (V)
- 1 to 3.0
I_D (mA)
- 190
SC-75A
(SOT-416)
G1
S2
3D
Marking Code: F
Top View
Ordering Information: Si1021R-T1-E3 (Lead (Pb)-free)
Si1021R-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
• Halogen-free Option Available
• TrenchFET^® Power MOSFETs
• High-Side Switching
• Low On-Resistance: 4 Ω
• Low Threshold: - 2 V (typ.)
• Fast Switching Speed: 20 ns (typ.)
• Low Input Capacitance: 20 pF (typ.)
• Miniature Package
• ESD Protected: 2000 V
RoHS
COMPLIANT
APPLICATIONS
• Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories, Transistors, etc.
• Battery Operated Systems
• Power Supply Converter Circuits
• Solid-State Relays
BENEFITS
• Ease in Driving Switches
• Low Offset Voltage
• Low-Voltage Operation
• High-Speed Circuits
• Easily Driven without Buffer
• Small Board Area
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain Current (T_J = 150 °C)^a
T_A = 25 °C
T_A = 85 °C
I_D
Pulsed Drain Current^b
I_DM
Power Dissipation^a
T_A = 25 °C
T_A = 85 °C
P_D
Maximum Junction-to-Ambient^a
R_thJA
Operating Junction and Storage Temperature Range
T_J, T_stg
Notes:
a. Surface mounted on FR4 board.
b. Pulse width limited by maximum junction temperature.
Limit
- 60
± 20
- 190
- 135
- 650
250
130
500
- 55 to 150
Unit
V
mA
mW
°C/W
°C
Document Number: 71410
S-81543-Rev. D, 07-Jul-08
www.vishay.com
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