SI1021R Datasheet, PDF (1/4 Pages) Vishay Siliconix – P-Channel 60-V (D-S) MOSFET

New Product
P-Channel 60-V (D-S) MOSFET
Si1021R
Vishay Siliconix
PRODUCT SUMMARY
V_(BR)DSS(min) (V)
–60
r_DS(on) (W)
4 @ V_GS = –10 V
V_GS(th) (V)
–1 to –3.0
I_D (mA)
–190
FEATURES
D High-Side Switching
D Low On-Resistance: 4 Ω
D Low Threshold: –2 V (typ)
D Fast Switching Speed: 20 ns (typ)
D Low Input Capacitance: 20 pF (typ)
D Miniature Package
D Gate-Source ESD Protection
BENEFITS
D Ease in Driving Switches
D Low Offset Voltage
D Low-Voltage Operation
D High-Speed Circuits
D Easily Driven Without Buffer
D Small Board Area
APPLICATIONS
D Drivers: Relays, Solenoids, Lamps, Hammers,
Displays, Memories, Transistors, etc.
D Battery Operated Systems
D Power Supply Converter Circuits
D Solid-State Relays
SC-75A
(SOT-416)
G1
S2
3D
Top View
Marking Code: F
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
V_DS
–60
V_GS
"20
Continuous Drain Current (T_J = 150_C)^a
Pulse Drain Current^b
T_A = 25_C
T_A = 85_C
I_D
I_DM
–190
–135
–650
Power Dissipation^a
Maximum Junction-to-Ambient^a
T_A = 25_C
250
P_D
T_A = 85_C
130
R_thJA
500
Operating Junction and Storage Temperature Range
T_J, T_stg
–55 to 150
Notes
a. Surface mounted on FR4 board.
b. Pulse width limited by maximum junction temperature.
Document Number: 71410
S-21120—Rev. C, 01-Jul-02
Unit
V
mA
mW
_C/W
_C
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