SI1016X_08 Datasheet, PDF (1/8 Pages) Vishay Siliconix – Complementary N- and P-Channel 20-V (D-S) MOSFET

Si1016X
Vishay Siliconix
Complementary N- and P-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
0.70 at V_GS = 4.5 V
N-Channel
20
0.85 at V_GS = 2.5 V
1.25 at V_GS = 1.8 V
1.2 at V_GS = - 4.5 V
P-Channel
- 20
1.6 at V_GS = - 2.5 V
2.7 at V_GS = - 1.8 V
I_D (mA)
600
500
350
- 400
- 300
- 150
FEATURES
• Halogen-free Option Available
• TrenchFET^® Power MOSFETs
• 2000 V ESD Protection
• Very Small Footprint
• High-Side Switching
• Low On-Resistance:
N-Channel, 0.7 Ω
P-Channel, 1.2 Ω
• Low Threshold: ± 0.8 V (Typ.)
• Fast Switching Speed: 14 ns
• 1.8 V Operation
SOT-563
SC-89
S1 1
6 D1
G1 ₂
5 G2 _{Marking Code: A}
D2 3
4 S2
Top View
Ordering Information: Si1016X-T1-E3 (Lead (Pb)-free)
Si1016X-T1-GE3 (Lead (Pb)-free and Halogen-free)
BENEFITS
• Ease in Driving Switches
• Low Offset (Error) Voltage
• Low-Voltage Operation
• High-Speed Circuits
• Low Battery Voltage Operation
APPLICATIONS
• Replace Digital Transistor, Level-Shifter
• Battery Operated Systems
• Power Supply Converter Circuits
• Load/Power Switching Cell Phones, Pagers
RoHS
COMPLIANT
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
N-Channel
P-Channel
Parameter
Symbol
5s
Steady State
5s
Steady State Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
20
- 20
V
V_GS
±6
Continuous Drain Current (T_J = 150 °C)^a
T_A = 25 °C
T_A = 85 °C
I_D
Pulsed Drain Current^b
I_DM
Continuous Source Current (Diode Conduction)^a
I_S
515
485
370
350
650
450
380
- 390
- 370
- 280
- 265
mA
- 650
- 450
- 380
Maximum Power Dissipation^a
T_A = 25 °C
T_A = 85 °C
P_D
280
145
250
130
280
145
250
mW
130
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
°C
Gate-Source ESD Rating (HBM, Method 3015)
ESD
2000
V
Notes:
a. Surface Mounted on FR4 board.
b. Pulse width limited by maximum junction temperature.
Document Number: 71168
S-80427-Rev. D, 03-Mar-08
www.vishay.com
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