SI1016X Datasheet, PDF (1/7 Pages) Vishay Siliconix – Complementary N and P-Channel 20-V (D-S) MOSFET

New Product
Si1016X
Vishay Siliconix
Complementary N- and P-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
V_DS (V)
N-Channel
20
P-Channel
–20
r_DS(on) (W)
0.70 @ V_GS = 4.5 V
0.85 @ V_GS = 2.5 V
1.25 @ V_GS = 1.8 V
1.2 @ V_GS = –4.5 V
1.6 @ V_GS = –2.5 V
2.7 @ V_GS = –1.8 V
I_D (mA)
600
500
350
–400
–300
–150
FEATURES
D Very Small Footprint
D High-Side Switching
D Low On-Resistance:
N-Channel, 0.7 W
P-Channel, 1.2 W
D Low Threshold: "0.8 V (typ)
D Fast Swtiching Speed: 14 ns
D 1.8-V Operation
D Gate-Source ESD Protection
BENEFITS
D Ease in Driving Switches
D Low Offset (Error) Voltage
D Low-Voltage Operation
D High-Speed Circuits
D Low Battery Voltage Operation
APPLICATIONS
D Replace Digital Transistor, Level-Shifter
D Battery Operated Systems
D Power Supply Converter Circuits
D Load/Power Switching Cell Phones, Pagers
S₁
1
SOT-563
SC-89
6 D₁
G₁ 2
5 G₂
Marking Code: A
D₂ 3
4 S₂
Top View
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
N-Channel
P-Channel
Parameter
Symbol ^{5 secs Steady State 5 secs Steady State}
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)^a
Pulsed Drain Current^b
T_A = 25_C
T_A = 85_C
Continuous Source Current (Diode Conduction)^a
Maximum Power Dissipation^a
T_A = 25_C
T_A = 85_C
Operating Junction and Storage Temperature Range
Gate-Source ESD Rating (HBM, Method 3015)
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
ESD
20
–20
"6
515
485
–390
–370
370
350
–280
–265
650
–650
450
380
–450
–380
280
250
280
250
145
130
145
130
–55 to 150
2000
Unit
V
mA
mW
_C
V
Notes
a. Surface Mounted on FR4 Board.
b. Pulse width limited by maximum junction temperature.
Document Number: 71168
S-03104—Rev. A, 08-Feb-01
www.vishay.com
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