SI1013R_08 Datasheet, PDF (1/6 Pages) Vishay Siliconix – P-Channel 1.8-V (G-S) MOSFET

P-Channel 1.8-V (G-S) MOSFET
Si1013R/X
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
1.2 at V_GS = - 4.5 V
- 20
1.6 at V_GS = - 2.5 V
2.7 at V_GS = - 1.8 V
I_D (mA)
- 350
- 300
- 150
SC-75A or SC-89
G1
S2
Top View
3D
SC-75A (SOT-416):
Si1013R - Marking Code D
SC-89 (SOT-490):
Si1013X - Marking Code B
Ordering Information:
Si1013R-T1-E3 (SC-75A, Lead (Pb)-free)
Si1013R-T1-GE3 (SC-75A, Lead (Pb)-free and Halogen-free)
Si1013X-T1-E3 (SC-89, Lead (Pb)-free)
Si1013X-T1-GE3 (SC-89, Lead (Pb)-free and Halogen-free)
FEATURES
• Halogen-free Option Available
• High-Side Switching
• Low On-Resistance: 1.2 Ω
• Low Threshold: 0.8 V (Typ.)
• Fast Switching Speed: 14 ns
• 1.8 V Operation
• TrenchFET^® Power MOSFETs
• 2000 V ESD Protection
RoHS
COMPLIANT
APPLICATIONS
• Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories
• Battery Operated Systems
• Power Supply Converter Circuits
• Load/Power Switching Cell Phones, Pagers
BENEFITS
• Ease in Driving Switches
• Low Offset (Error) Voltage
• Low-Voltage Operation
• High-Speed Circuits
• Low Battery Voltage Operation
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
5s
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
- 20
V
V_GS
±6
Continuous Drain Current (T_J = 150 °C)^b
Pulsed Drain Current^a
T_A = 25 °C
T_A = 85 °C
I_D
- 400
- 300
- 350
- 275
mA
I_DM
- 1000
Continuous Source Current (diode conduction)^b
I_S
- 275
- 250
Maximum Power Dissipation^b for SC-75
Maximum Power Dissipation^b for SC-89
T_A = 25 °C
T_A = 85 °C
T_A = 25 °C
P_D
T_A = 85 °C
175
150
90
80
mW
275
250
160
140
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
°C
Gate-Source ESD Rating (HBM, Method 3015)
ESD
2000
V
Notes:
a. Pulse width limited by maximum junction temperature.
b. Surface Mounted on FR4 board.
Document Number: 71167
S-81444-Rev. C, 23-Jun-08
www.vishay.com
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