SI1013CX Datasheet, PDF (1/8 Pages) Vishay Siliconix – P-Channel 20 V (D-S) MOSFET

www.vishay.com
Si1013CX
Vishay Siliconix
P-Channel 20 V (D-S) MOSFET
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
0.760 at V_GS = -4.5 V
-20
1.040 at V_GS = -2.5 V
1.500 at V_GS = -1.8 V
I_D (A)
-0.45
-0.40
-0.32
Q_g (TYP.) (nC)
1
SC-89 (3 leads)
D
3
2
S
1
G
Top View
Marking Code: 6
Ordering Information:
Si1013CX-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
• TrenchFET^® power MOSFET
• 100 % R_g tested
• Typical ESD protection: 1000 V (HBM)
• Fast switching speed
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Load / power switch for portable
S
devices
• Drivers: relays, solenoids, displays
• Battery operated systems
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain Current (T_J = 150 °C)
T_A = 25 °C
I_D
T_A = 70 °C
Pulsed Drain Current (t = 300 μs)
I_DM
Continuous Source-Drain Diode Current
Maximum Power Dissipation
T_A = 25 °C
I_S
T_A = 25 °C
P_D
T_A = 70 °C
Operating Junction and Storage Temperature Range
T_J, T_stg
LIMIT
-20
±8
-0.45 ^{b, c}
-0.36 ^{b, c}
-1.5
-0.16 ^{b, c}
0.19 ^{b, c}
0.12 ^{b, c}
-55 to +150
UNIT
V
A
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient ^{a, b}
t≤5s
Steady State
Notes
a. Maximum under steady state conditions is 650 °C/W.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
SYMBOL
R_thJA
TYPICAL
440
540
MAXIMUM
530
650
UNIT
°C/W
S14-1601-Rev. B, 11-Aug-14
1
Document Number: 67995
For technical questions, contact: [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000