SI1012R_08 Datasheet, PDF (1/6 Pages) Vishay Siliconix – N-Channel 1.8-V (G-S) MOSFET

N-Channel 1.8-V (G-S) MOSFET
Si1012R/X
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
0.70 at V_GS = 4.5 V
20
0.85 at V_GS = 2.5 V
1.25 at V_GS = 1.8 V
SC-75A or SC-89
G1
I_D (mA)
600
500
350
3D
S2
Top View
ORDERING INFORMATION
Part Number
Si1012R-T1-E3 (Lead (Pb)-free)
Si1012R-T1-GE3 (Lead (Pb)-free
and Halogen-free)
Si1012X-T1-E3 (Lead (Pb)-free)
Si1012X-T1-GE3 (Lead (Pb)-free
and Halogen-free)
Package
SC-75A
(SOT-416)
SC-89
(SOT-490)
Marking
Code
C
A
FEATURES
• Halogen-free Option Available
• TrenchFET^® Power MOSFET: 1.8 V Rated
• Gate-Source ESD Protected: 2000 V
• High-Side Switching
• Low On-Resistance: 0.7 Ω
• Low Threshold: 0.8 V (typ.)
• Fast Switching Speed: 10 ns
RoHS
COMPLIANT
APPLICATIONS
• Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories
• Battery Operated Systems
• Power Supply Converter Circuits
• Load/Power Switching Cell Phones, Pagers
BENEFITS
• Ease in Driving Switches
• Low Offset (Error) Voltage
• Low-Voltage Operation
• High-Speed Circuits
• Low Battery Voltage Operation
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
5s
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
20
V
V_GS
±6
Continuous Drain Current (T_J = 150 °C)^b
Pulsed Drain Current^a
T_A = 25 °C
T_A = 85 °C
I_D
I_DM
600
500
400
350
mA
1000
Continuous Source Current (Diode Conduction)^b
I_S
275
250
Maximum Power Dissipation^b for SC-75
Maximum Power Dissipation^b for SC-89
T_A = 25 °C
175
T_A = 85 °C
T_A = 25 °C
P_D
90
275
T_A = 85 °C
160
150
80
mW
250
140
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
°C
Gate-Source ESD Rating (HBM, Method 3015)
ESD
2000
V
Notes:
a. Pulse width limited by maximum junction temperature.
b. Surface Mounted on FR4 board.
Document Number: 71166
S-81543-Rev. C, 07-Jul-08
www.vishay.com
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