SI1012R_05 Datasheet, PDF (1/6 Pages) Vishay Siliconix – N-Channel 1.8-V (G-S) MOSFET

N-Channel 1.8-V (G-S) MOSFET
Si1012R/X
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (W)
I_D (mA)
0.70 @ V_GS = 4.5 V
600
20
0.85 @ V_GS = 2.5 V
500
1.25 @ V_GS = 1.8 V
350
SC-75A or SC-89
G1
3D
S2
Top View
ORDERING INFORMATION
Part Number
Marking
Package Code
Si1012R-T1
Si1012R-T1—E3 (Lead (Pb)-Free)
SC−75A
(SOT-416)
C
Si1012X-T1
Si1012X-T1—E3 (Lead (Pb)-Free)
SC-89
(SOT-490)
A
FEATURES
D TrenchFETr Power MOSFET: 1.8-V Rated
D Gate-Source ESD Protected: 2000 V
D High-Side Switching
D Low On-Resistance: 0.7 W
D Low Threshold: 0.8 V (typ)
D Fast Switching Speed: 10 ns
Pb-free
Available
BENEFITS
D Ease in Driving Switches
D Low Offset (Error) Voltage
D Low-Voltage Operation
D High-Speed Circuits
D Low Battery Voltage Operation
APPLICATIONS
D Drivers: Relays, Solenoids, Lamps, Hammers,
Displays, Memories
D Battery Operated Systems
D Power Supply Converter Circuits
D Load/Power Switching Cell Phones, Pagers
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 secs
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)^b
Pulsed Drain Current^a
Continuous Source Current (diode conduction)^b
Maximum Power Dissipation^b for SC-75
Maximum Power Dissipation^b for SC-89
Operating Junction and Storage Temperature Range
Gate-Source ESD Rating (HBM, Method 3015)
T_A = 25_C
T_A = 85_C
T_A = 25_C
T_A = 85_C
T_A = 25_C
T_A = 85_C
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
ESD
20
"6
600
500
400
350
1000
275
250
175
150
90
80
275
250
160
140
−55 to 150
2000
Unit
V
mA
mW
_C
V
Notes
d. Pulse width limited by maximum junction temperature.
e. Surface Mounted on FR4 Board.
Document Number: 71166
S-50366—Rev. B, 28-Feb-05
www.vishay.com
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