SI1012R Datasheet, PDF (1/5 Pages) Vishay Siliconix – N-Channel 1.8-V (G-S) MOSFET

New Product
N-Channel 1.8-V (G-S) MOSFET
Si1012R/X
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (W)
0.70 @ V_GS = 4.5 V
20
0.85 @ V_GS = 2.5 V
1.25 @ V_GS = 1.8 V
I_D (mA)
600
500
350
FEATURES
D High-Side Switching
D Low On-Resistance: 0.7 W
D Low Threshold: 0.8 V (typ)
D Fast Swtiching Speed: 10 ns
D 1.8-V Operation
D Gate-Source ESD Protection
BENEFITS
D Ease in Driving Switches
D Low Offset (Error) Voltage
D Low-Voltage Operation
D High-Speed Circuits
D Low Battery Voltage Operation
APPLICATIONS
D Drivers: Relays, Solenoids, Lamps,
Hammers, Displays, Memories
D Battery Operated Systems
D Power Supply Converter Circuits
D Load/Power Switching Cell Phones, Pagers
SC-75A or SC-89
G1
S2
3D
Ordering Information:
SC-75A (SOT– 416):
Si1012R–Marking Code : C
SC-89 (SOT– 490):
Si1012X–Marking Code: A
Top View
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 secs
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)^b
Pulsed Drain Current^a
Continuous Source Current (diode conduction)^b
Maximum Power Dissipation^b for SC-75
Maximum Power Dissipation^b for SC-89
Operating Junction and Storage Temperature Range
Gate-Source ESD Rating (HBM, Method 3015)
T_A = 25_C
T_A = 85_C
T_A = 25_C
T_A = 85_C
T_A = 25_C
T_A = 85_C
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
ESD
20
"6
600
500
400
350
1000
275
250
175
150
90
80
275
250
160
140
–55 to 150
2000
Notes
a. Pulse width limited by maximum junction temperature.
b. Surface Mounted on FR4 Board.
Document Number: 71166
S-02464—Rev. A, 25-Oct-00
Unit
V
mA
mW
_C
V
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