SI1011X Datasheet, PDF (1/8 Pages) Vishay Siliconix – P-Channel 12 V (D-S) MOSFET

P-Channel 12 V (D-S) MOSFET
Si1011X
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
- 12
R_DS(on) () Max.
0.640 at V_GS = - 4.5 V
0.880 at V_GS = - 2.5 V
1.200 at V_GS = - 1.8 V
1.443 at V_GS = - 1.5 V
2.475 at V_GS = - 1.2 V
I_D (A)
- 0.48
- 0.41
- 0.35
- 0.10
- 0.05
SC-89 (3-LEADS)
G1
S2
3D
Q_g (Typ.)
1.15 nC
FEATURES
• TrenchFET^® Power MOSFET
• Typical ESD protection: 700 V (HBM)
• Fast Switching Speed
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Portable Devices such as Smart Phones, Tablet PCs and
Mobile Computing
- Load Switch for Low Voltage Gate Drive
- Load Switch for 1.2 V Power Line
Marking Code
K XX
Lot Traceability
and Date Code
Part # Code
S
G
Top View
Ordering Information: Si1011X-T1-GE3 (Lead (P b)-free and Halogen-free)
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
- 12
V
V_GS
±5
Continuous Drain Current (T_J = 150 °C)
T_A = 25 °C
T_A = 70 °C
I_D
- 0.48^{b, c}
- 0.38^{b, c}
A
Pulsed Drain Current (t = 300 µs)
I_DM
- 1.5
Continuous Source-Drain Diode Current
T_A = 25 °C
I_S
- 0.16^{b, c}
Maximum Power Dissipation
T_A = 25 °C
T_A = 70 °C
P_D
0.19^{b, c}
0.12^{b, c}
W
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^{a, b}
t 5 s
Steady State
Notes:
a. Maximum under steady state conditions is 650 °C/W.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
Symbol
R_thJA
Typical
440
540
Maximum
530
650
Unit
°C/W
Document Number: 62660
For technical questions, contact: [e-mail]
www.vishay.com
S12-2732-Rev. B, 12-Nov-12
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000