SFH614A Datasheet, PDF (1/6 Pages) Vishay Siliconix – Optocoupler, Phototransistor Output, 300 V BV-CEO

VISHAY
SFH614A
Vishay Semiconductors
Optocoupler, Phototransistor Output, 300 V BV_CEO
Features
• High Isolation Test Voltage, 5300 V_RMS
• High Collector-Emitter Voltage, V_CEO = 300 V
• Standard Plastic DIP-4 Package
Agency Approvals
• UL File #E52744 System Code H or J
• CSA 93751
i179060
A1
C2
4C
3E
Description
The SFH614A features a high collector-emitter volt-
age and high isolation voltage. These couplers have
a GaAs infrared emitting diode emitter, which is opti-
cally coupled to a silicon planar phototransistor detec-
tor, and is incorporated in a plastic DIP-4 package.
The coupling devices are designed for signal trans-
mission between two electrically separated circuits.
Order Information
Part
SFH614A
SFH614A-X009
Remarks
CTR > 50 %, DIP-4
CTR > 50 %, SMD-4 (option 9)
For additional information on the available options refer to
Option Information.
Absolute Maximum Ratings
T_amb = 25 °C, unless otherwise specified
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Parameter
Reverse voltage
DC Forward current
Surge forward current
Derate linearly from 25 °C
Total power dissipation
Test condition
t ≤ 10 µs
Symbol
V_R
I_F
I_FSM
P_diss
Value
6.0
60
2.5
1.33
100
Unit
V
mA
A
mW/°C
mW
Output
Parameter
Collector-emitter voltage
Emitter-collector voltage
Collector current
Derate linearly from 25 °C
Total power dissipation
Test condition
t ≤ 1.0 ms
Symbol
V_CEO
V_ECO
I_C
I_C
P_diss
Value
300
7.0
50
100
2.00
150
Unit
V
V
mA
mA
mW/°C
mW
Document Number 83670
Rev. 1.3, 19-Apr-04
www.vishay.com
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