SFH6135 Datasheet, PDF (1/4 Pages) Vishay Siliconix – HIGH-SPEED 5.3 kV TRIOS OPTOCOUPLER

SFH6135 / SFH6136
HIGH-SPEED 5.3 kV TRIOS“
OPTOCOUPLER
FEATURES
• Isolation Test Voltage: 5300 V_RMS
• TTL Compatible
• High Bit Rates: 1.0 Mbit/s
• High CoMmon-mode Interference Immunity
• Bandwidth 2.0 MHz
• Open-collector Output
• External Base Wiring Possible
• Field-effect Stable by TRIOS
(TRansparent IOn Shield)
• Underwriters Lab File #52744
•
V
DE
VDE 0884 Available with Option 1
Description
The SFH6135 and SFH6136 optocouplers feature
a high signal transmission rate and a high isola-
tion resistance. They have a GaAIAs infrared
emitting diode, optically coupled with an inte-
grated photodetector which consists of a photo-
diode and a high-speed transistor in a DIP-8
plastic package.
Signals can be transmitted between two electri-
cally separated circuits up to frequencies of 2.0
MHz. The potential difference between the cir-
cuits to be coupled is not allowed to exceed the
maximum permissible reference voltages.
Dimensions in inches (mm)
pin one ID
4 321
.255 (6.48)
.268 (6.81)
5 678
NC 1
Anode ²
Cathode ³
.030 (0.76)
.045 (1.14)
4° typ.
.379 (9.63)
.390 (9.91)
NC ⁴
.031 (0.79)
.300 (7.62)
typ.
.130 (3.30)
.150 (3.81)
.050 (1.27)
.018 (.46)
.022 (.56)
.020 (.51 )
.035 (.89 )
.100 (2.54) typ.
10 °
3°–9°
.008 (.20)
.012 (.30)
8
Cathode
(V_CC)
7 ^Base
(V_B)
6 ^Collector
(V_O)
5 Emitter
(GND)
.230(5.84)
.110 (2.79) _.250(6.35)
.130 (3.30)
Maximum Ratings
Emitter
Reverse Voltage ........................................................................................ 3.0 V
Forward Current ......................................................................................25 mA
Peak Forward Current (t =1.0 ms, duty cycle 50%)................................50 mA
Maximum Surge Forward Current (t ≤1.0 µs, 300 pulses/s) .....................1.0 A
Thermal Resistance .............................................................................700 K/W
Total Power Dissipation (T_A≤70°C) ......................................................... 45 mW
Detector
Supply Voltage ............................................................................... –0.5 to 30 V
Output Voltage ............................................................................... –0.5 to 25 V
Emitter-base Voltage ................................................................................. 5.0 V
Output Current .......................................................................................8.0 mA
Maximum Output Current........................................................................16 mA
Base Current ..........................................................................................5.0 mA
Thermal Resistance .............................................................................300 K/W
Total Power Dissipation (T_A≤70°C) ....................................................... 100 mW
Package
Isolation Test Voltage ...................................................................... 5300 V_RMS
Pollution Degree (DIN VDE 0110) ................................................................... 2
Creepage ........................................................................................... ≥7.0 mm
Clearance........................................................................................... ≥7.0 mm
Comparative Tracking Index per DIN IEC112/VDE 0303 part 1 ................. 175
Isolation Resistance
V_IO=500 V, T_A=25°C .......................................................................... ≥10¹² Ω
V_IO=500 V, T_A=100°C ........................................................................ ≥10¹¹ Ω
Storage Temperature Range ................................................. –55°C to +125°C
Ambient Temperature Range ................................................ –55°C to +100°C
Soldering Temperature (max. ≤10 s. dip soldering
≥0.5 mm distance from case bottom).................................................. 260°C
Document Number: 83668
Revision 17-August-01
www.vishay.com
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