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SF1200_05 Datasheet, PDF (1/5 Pages) Vishay Siliconix – Ultra Fast Avalanche Sinterglass Diode
Ultra Fast Avalanche Sinterglass Diode
SF1200 / SF1600
Vishay Semiconductors
Features
• Very low switching losses
• Glass passivated
e2
• Low reverse current
• High reverse voltage
• Hermetically sealed axial-leaded glass envelope
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Applications
Switched-mode power supplies
High-frequency inverter circuits
Mechanical Data
Case: SOD-57 Sintered glass case
949539
Terminals: Plated axial leads, solderable per
MIL-STD-750, Method 2026
Polarity: Color band denotes cathode end
Mounting Position: Any
Weight: approx. 369 mg
Parts Table
Part
SF1200
SF1600
Type differentiation
VR = 1200 V; IFAV = 1 A
VR = 1600 V; IFAV = 1 A
SOD-57
SOD-57
Package
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Part
Symbol
Value
Unit
Reverse voltage = Repetitive see electrical characteristics
SF1200
VR = VRRM
1200
V
peak reverse voltage
SF1600
VR = VRRM
1600
V
Peak forward surge current
tp = 10 ms, half-sinewave
IFSM
30
A
Average forward current
half-sinewave, VR = VRRM,
RthJA = 45 K/W, Tamb = 25 °C
IFAV
1
A
Max. pulse energy in avalanche I(BR)R = 400 mA, inductive load
mode, non repetitive (inductive
load switch off)
ER
10
mJ
Junction and storage
temperature range
Tj = Tstg
- 55 to + 175
°C
Maximum Thermal Resistance
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Value
Unit
Junction ambient
Lead length l = 10 mm,
RthJA
45
K/W
TL = constant
Document Number 86059
Rev. 1.6, 14-Apr-05
www.vishay.com
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